耐放射線性カメラ用撮像素子のγ線照射効果
Gamma Irradiation Effects of Image Sensor for Radiation-resistant Camera
著者:
武内 伴照 Tomoaki TAKEUCHI 大塚 紀彰 Noriaki OTSUKA 土谷 邦彦 Kunihiko TSUCHIYA 田中 茂雄 Shigeo TANAKA 小沢 治 Osamu OZAWA 駒野目 裕久 Hirohisa KOMANOME 渡辺 恭志 Takashi WATANABE 上野 俊二 Shunji UENO
発刊日:
公開日:
Dark CurrentGamma IrradiationImage SensorPhotodiodePhotogateRadiation-resistant CameraTransistor
概要
As an advanced surveillance systems in nuclear power plants, a development of a radiation-resistant camera for visual surveillance even under severe accidents. From the result of a gamma irradiation test for a ready-made hi-vision camera, it was revealed that the increase of dark current in the image sensor was the main cause of degradation of image quality by irradiation. To suppress the dark current, three different types of CMOS image sensors with field plate structure and three transistors, photogate structure and three or four transistors were fabricated as a trial. The results of a gamma irradiation for them showed the sensor with the photogate and three transistors was the most advantageous one in terms of dark current and sensitivity. Its radiation resistance was estimated over 200 kGy for gamma radiation environment.
